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Electrically tunable three-dimensional g-factor anisotropy in single InAs self-assembled quantum dots

机译:单个电可调三维g因子各向异性   Inas自组装量子点

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摘要

Three-dimensional anisotropy of the Lande g-factor and its electricalmodulation are studied for single uncapped InAs self-assembled quantum dots(QDs). The g-factor is evaluated from measurement of inelastic cotunneling viaZeeman substates in the QD for various magnetic field directions. We find thatthe value and anisotropy of the g-factor depends on the type of orbital statewhich arises from the three-dimensional confinement anisotropy of the QDpotential. Furthermore, the g-factor and its anisotropy are electrically tunedby a side-gate which modulates the confining potential.
机译:研究了单个未封端的InAs自组装量子点(QD)的Lande g因子的三维各向异性及其电调制。 g因子是通过针对各种磁场方向通过QD中的Zeeman子态的非弹性协同隧穿测量来评估的。我们发现g因子的值和各向异性取决于QD势的三维约束各向异性引起的轨道状态的类型。此外,通过调节限制电位的侧门对g因子及其各向异性进行电调谐。

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